1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b medium power transistor (60v, 0.5a) 2sc5876 ? features ? dimensions (unit : mm) 1) high speed switching. (tf : typ. : 80ns at i c = 500ma) 2) low saturation voltage, typically (typ. : 150mv at i c = 100ma, i b = 10ma) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sa2088 ? applications small signal low frequency amplifier high speed switching ? structure npn silicon epitaxial planar transistor ? packaging specifications taping 2sc5876 type t106 3000 package basic ordering unit (pieces) code ? absolute maximum ratings (ta=25 ?c) parameter v v v a mw ? 1 pw=10ms ? 2 each terminal mounted on a recommended land. ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol 60 60 6 0.5 1.0 200 150 ?55 to +150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature each lead has same dimensions abbreviated symbol : vs umt3 1.25 2.1 0.3 0.15 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 (1)emitter (2)base (3)collector
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b data sheet 2sc5876 ? electrical characteristics (ta=25 qc) ? 1 pulse measurement ? 1 ? 1 parameter symbol bv ebo i cbo i ebo v ce(sat) ft h fe cob ton min. 6 ? ? ? 120 ? ? ? ? ? 300 ?? 5 70 ? 1.0 1.0 ? 150 300 390 ? ? ? i e = 100a v ce = 2v, i c = 50ma v cb = 40v v eb = 4v i c = 100ma, i b = 10ma i c =500m a, i b1 = 50ma i b2 = ? 50ma v cc 25v v ce = 10v, i e = ? 100ma, f = 10mhz v cb = 10v, i e = 0ma, f = 1mhz v a a mhz mv pf ns tstg ? 130 ? ns tf ? 80 ? ns typ. max. unit conditions bv ceo 60 ?? v i c = 1ma collector?emitter breakdown voltage collector cut-off current dc current gain transition frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector?emitter staturation voltage bv cbo 60 ?? i c = 100a v collector?base breakdown voltage emitter?base breakdown voltage ? h fe rank qr 120-270 180-390 ? electrical characteristic curves fig.1 switching time 1 0.01 0.1 1 0 1000 100 10 collector current : i c (a) switching time (ns) ta=25c v cc =25v i c /i b =10/1 tstg tf ton fig.2 dc current gain vs. collecto r current collector current : i c (a) dc current gain : h fe 0.01 0.1 0.001 1 1000 100 10 1 ta=125c ta=25c ta= ?40c v ce =2v collector current : i c (a) fig.3 dc current gain vs. collecto r current 0.001 0.01 0.1 1 1 10 100 1000 dc current gain : h fe v ce =3v v ce =2v ta=25c v ce =5v 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 1 i c /i b =10/1 ta=125c ta=25c fig.4 collector-emitter saturation voltag e vs. collector current ta= ?40c 0.001 0.1 0.01 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) f ig.5 collector-emitter saturation voltag e vs. collector current i c /i b =10/1 i c /i b =20/1 ta=25c collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.6 base-emitter saturation voltag e vs. collector current 0.001 0.01 0.1 1 ta=125c i c /i b =10/1 ta=25c ta= ?40c 10 1 0.1 0.01
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b data sheet 2sc5876 0.01 0.1 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1 .5 fig.7 ground emitter propagat on characteristics ta=125c ta=25c ta= ?40c v ce =2v 1000 transition frequency : f t (mhz) emitter current : i e (a ) ? 1 0 ? 1 ? 0.1 ? 0.01 ? 0.001 100 10 1 fig.8 transition frequency ta=25c v ce =10v 100 collector output capacitance : c ob ( p f) base to collector voltage : v cb ( v) 10 0 10 1 0.1 10 1 fig.9 collector output capacitanc e ta=25c f=1mhz ? switching characteristics measurement circuits collector current waveform base current waveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l =50 v cc 25 v p w 50 s duty cycle 1% ton tstg tf
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